Photosensitive imaging devices and associated methods

A method of making a backside-illuminated photosensitive imager device, comprising:

• forming at least one junction at a surface of a semiconductor substrate;
• forming a passivation region over the at least one junction;
• forming a textured region over the passivation region, wherein the passivation region isolates the at least one junction from the textured region, and wherein the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region;
• and
• coupling an electrical transfer element to the semiconductor substrate such that the electrical transfer element is operable to transfer an electrical signal from the at least one junction.

A backside-illuminated photosensitive imager device, comprising:

• a semiconductor substrate having multiple doped regions forming a least one junction;
• a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation;
• a passivation region positioned between the textured region and the at least one junction, the passivation region being positioned to isolate the at least one junction from the textured region, wherein the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region;
• and
• at least 4 transistors coupled to the semiconductor substrate and with at least one of the transistors electrically coupled to the at least one junction.