Semiconductor device and method for manufacturing the same
AssigneePanasonic Corporation
InventorTakayuki Yamada
Life of this patent
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Abstract
A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween; a side wall spacer formed on a side wall of the gate electrode; source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate. A gate-length-direction thickness of an upper portion of the side wall spacer is at least larger than a gate-length-direction thickness of a middle portion thereof.
Claims18
A semiconductor device comprising:
- a semiconductor substrate;
- a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween;
- a side wall spacer formed on a side wall of the gate electrode;
- source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween;
- and
- a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate,
- wherein
- the side wall spacer includes a first side wall portion formed on the side wall of the gate electrode and on the semiconductor substrate and having an L-shaped cross section, and a second side wall portion formed on an upper end portion of the first side wall portion and having a gate-length-direction thickness at least larger than a gate-length-direction thickness of a middle portion of the first side wall portion in the height direction, and
- the side wall spacer further includes a third side wall portion interposed between the first side wall portion and the side wall of the gate electrode.
A semiconductor device comprising:
- a semiconductor substrate;
- a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween;
- a side wall spacer formed on a side wall of the gate electrode;
- source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween;
- and
- a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate,
- wherein the side wall spacer includes a first side wall portion formed on the side wall of the gate electrode and on the semiconductor substrate and having an L-shaped cross section, a second side wall portion formed on an upper end portion of the first side wall portion, and a third side wall portion formed on the side surface of the second side wall portion,
- a total of a gate-length-direction thickness of the second side wall portion and that of the third side wall portion formed on the side surface of the second side wall portion is larger than a gate-length-direction thickness of a middle portion of the first side wall portion in the height direction, and
- the side wall spacer further includes a fourth side wall portion interposed between the first side wall portion and the side wall of the gate electrode.
A semiconductor device comprising:
- a semiconductor substrate;
- a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween;
- a side wall spacer formed on a side wall of the gate electrode;
- source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween;
- and
- a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate,
- wherein a gate-length-direction thickness of an upper portion of the side wall spacer in a height direction is at least larger than a gate-length-direction thickness of a middle portion thereof in the height direction, and
- a gate-length-direction thickness of a portion of the side wall spacer in contact with the side wall of the gate electrode increases from a middle portion toward a lower portion in the height direction.
Dependencies are inferred from the claim text.