Semiconductor device
AssigneeSanken Electric Co., Ltd.
InventorsOsamu Machida, Akio Iwabuchi
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Abstract
An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.
Claims11
A semiconductor device comprising:
- a semiconductor region includes a first semiconductor layer and a second semiconductor layer stacked on a main surface of the first semiconductor layer to form a heterointerface therebetween;
- a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region;
- a gate structure including a gate electrode and exhibiting normally-off characteristics, the gate structure has a recess structure formed by removing a part of the main surface of the semiconductor region and arranged between the source electrode and the drain electrode;
- and
- a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode,
- wherein the semiconductor region spanning the entirety of a bottom of the fourth electrode has a thickness that is greater relative to the semiconductor region spanning the entirety of the gate electrode.
Dependencies are inferred from the claim text.