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US 8,476,675 B2Granted
Semiconductor device and method of manufacture thereof
AssigneeNXP B.V.
InventorsPhilippe Meunier-Beillard, Johannes J. T. M. Donkers, Erwin Hijzen
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AssigneeNXP B.V.
InventorsPhilippe Meunier-Beillard, Johannes J. T. M. Donkers, Erwin Hijzen
Estimating the term…
A semiconductor device (10) comprising a bipolar transistor and a field 5 effect transistor within a semiconductor body (1) comprising a projecting mesa (5) within which are at least a portion of a collector region (22c and 22d) and a base region (33c) of the bipolar transistor. The bipolar transistor is provided with an insulating cavity (92b) provided in the collector region (22c and 22d). The insulating cavity (92b) may be provided by providing a layer (33a) in the collector region (22c), creating an access path, for example by selectively etching polysilicon towards monocrystalline, and removing a portion of the layer (33a) to provide the cavity using the access path. The layer (33a) provided in the collector region may be of SiGe:C. By blocking diffusion from the base region the insulating cavity (92b) provides a reduction in the base collector capacitance and can be described as defining the base contact.
A semiconductor device with a substrate and a semiconductor body comprising a bipolar transistor with, in the following order, a collector region having a first part and a second part, a base region, and an emitter region, wherein the semiconductor body comprises a projecting mesa within which at least a portion of the collector region and the base region are present and which is surrounded by an isolation region;
A method of manufacturing a semiconductor device, the method comprising:
Dependencies are inferred from the claim text.