Light emitting device, light emitting device package, and lighting device

A light emitting device package comprising:

• a package body;
• a light emitting device coupled to the package body;
• a first electrode layer and a second electrode layer coupled to the package body electrically connected to the light emitting device;
• and
• a filling material at least partially around the light emitting device,
• wherein the light emitting device includes a support, a light emitting structure coupled to the support, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the second conductive type semiconductor layer and the first conductive type semiconductor layer, a first nitride semiconductor layer coupled to the second conductive type semiconductor layer, a second nitride semiconductor layer coupled to the first nitride semiconductor layer and including an uneven surface, and
• a first electrode pad coupled to the light emitting structure, wherein:
• the second nitride semiconductor layer has an opening that exposes a portion of the first nitride semiconductor layer,
• the first electrode pad is directly coupled to the exposed portion of the first nitride semiconductor layer through the opening and is spaced from the second nitride semiconductor layer,
• the exposed portion of the first nitride semiconductor layer directly coupled to the first electrode pad has a work function smaller than that of the second nitride semiconductor layer that is spaced from the first electrode,
• at least one of the first nitride semiconductor layer or the second nitride semiconductor layer has a composition that includes indium, and
• an indium content of the exposed portion of the first nitride semiconductor layer is greater than an indium content of the second nitride semiconductor layer.

A lighting system comprising:

• a light source having a plurality of light emitting device packages on a substrate;
• a housing for housing the light source;
• a heat dissipating dissipater to dissipate heat from the light source;
• and
• a holder to couple the light source and the heat dissipating dissipater to the housing, wherein the light emitting device package includes:
• a package body,
• a light emitting device coupled to the package body,
• a first electrode layer and a second electrode layer coupled to the package body and electrically connected to the light emitting device, and
• a filling material at least partially around the light emitting device,
• wherein the light emitting device includes:
• a support,
• a light emitting structure coupled to the support, the light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the second conductive type semiconductor layer and the first conductive type semiconductor layer, a first nitride semiconductor layer coupled to the second conductive type semiconductor layer, a second nitride semiconductor coupled to the first nitride semiconductor layer and including an uneven surface, and
• a first electrode pad coupled to the light emitting structure, wherein:
• the second nitride semiconductor layer has an opening that exposes a portion of the first nitride semiconductor layer,
• the first electrode pad is directly coupled to the exposed portion of the first nitride semiconductor layer through the opening and is spaced from the second nitride semiconductor layer,
• the exposed portion of the first nitride semiconductor layer directly coupled to the first electrode pad has a work function smaller than that of the second nitride semiconductor layer that is spaced from the first electrode,
• at least one of the first nitride semiconductor layer or second nitride semiconductor layer has a composition that includes indium, and
• an indium content of the exposed portion of the first nitride semiconductor layer is greater than an indium content of the second nitride semiconductor layer.