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US 8,476,670 B2Granted
Light emitting devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsJun-youn Kim, Bok-ki Min, Hyun-gi Hong, Jae-won Lee
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Abstract
Light emitting devices and methods of manufacturing the light emitting devices. The light emitting devices include a silicon substrate; a metal buffer layer on the silicon substrate, a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer; and a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer.
Claims9
A light emitting device comprising:
- a silicon substrate;
- a metal buffer layer on the silicon substrate, wherein the metal buffer layer includes at least one of B and B2;
- a patterned dispersion Bragg reflection (DBR) layer on the metal buffer layer, the patterned DBR layer including a plurality of holes, wherein each of the plurality of holes has a diameter of about 10 nm to about 1 μm;
- a nitride-based thin film layer on the patterned DBR layer and regions between patterns of the DBR layer;
- and
- a light emitting layer including AlxGa1-xInyN (0≦x<1, 0≦y<1).
3 more elements
Dependencies are inferred from the claim text.