Light emitting device

A method of binning light emitting diodes (LED) comprising:

• providing a plurality of LED dies on a first wafer, each of the plurality of LED dies comprising a p-type layer and an n-type layer;
• supplying test power to each of the plurality of LED dies through the p-type layer and the n-type layer;
• measuring a light emitted for each of the plurality of LED dies for wafer-level binning of each of the plurality of LED dies;
• slicing the first wafer to separate the plurality of LED dies;
• bonding, in response to the wafer-level binning, a selected subset of the LED dies to a second wafer with better thermal dissipation properties than the first wafer;
• removing remaining portions of the first wafer from each of the LED dies bonded to the second wafer, thereby exposing a surface of the n-type layer;
• and
• forming an electrode contact on the exposed surface of the n-type layer.

A light emitting diode (LED) die comprising:

• epitaxial layers of semiconductor materials comprising an n-doped layer, an active layer, and a p-doped layer;
• a plurality of regions of a dielectric material disposed on top of the epitaxial layers and along sidewalls of the LED die;
• a reflective mirror layer disposed underneath the p-doped layer;
• a substrate, wherein the substrate comprises interconnects formed within the substrate to provide electrical connections to the LED die;
• a bonding metal layer disposed between the reflective mirror layer and the substrate to bond the LED die to the substrate;
• a p-contact layer disposed between the reflective mirror layer and the p-doped layer;
• and
• an n-contact layer disposed over the n-doped layer, wherein the n-doped layer, the active layer, and the p-doped layer are all located between the n-contact layer and the p-contact layer.