Solid state lighting devices with accessible electrodes and methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsMartin F. Schubert, Vladimir Odnoblyudov
Life of this patent
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Abstract
Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.
Claims24
A light emitting die, comprising:
- a first semiconductor material having a first surface;
- a second semiconductor material having a second surface facing away from the first surface of the semiconductor material;
- an active region between the first and second semiconductor materals, wherein the first semiconductor material, the active region, and the second semiconductor material together have a stack thickness equal to a distance between the first and the second surfaces;
- a first electrode in contact with the first surface of the first semiconductor material;
- a second electrode in contact with the second surface of the second semiconductor material, the second electrode being spaced apart from the first electrode by at least the stack thickness, wherein the second electrode includes
- a first portion covered by the first semiconductor material, the active region, and the second semiconductor material;
- a second portion extending from the first portion, the second portion of the second electrode including a plurality of individual sections spaced apart from one another;
- and
- the individual sections of the second portion laterally extend beyond the first semiconductor material, the active region, and the second semiconductor material;
- and
- wherein a portion of the second electrode is exposed through the first semiconductor material, the active region, and the second semiconductor material.
A light emitting device, comprising:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials;
- an opening extending completely through the second semiconductor material and the active region and only a portion of the first semiconductor material;
- a passivation material having a first passivation portion lining a sidewall of the opening and a second passivation portion extending laterally relative to the first passivation portion external to the opening;
- a first electrode in the opening and adjacent the first passivation portion;
- and
- a second electrode external to the opening between the second semiconductor material and the second passivation portion of the passivation material, a portion of the second electrode being exposed through the first semiconductor material, the active region, and the second semiconductor material.
A light emitting diode (“LED”) die, comprising:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials;
- a first electrode extending through the second semiconductor material, the active region and a portion of the first semiconductor material, wherein the first electrode is electrically coupled to the first semiconductor material and electrically isolated from the second semiconductor material and the active region;
- and
- a second electrode in contact with the second semiconductor material and surrounding at least a portion of the first electrode, wherein the second electrode is electrically isolated from the first electrode and a portion of the second electrode is exposed through the first semiconductor material, the active region, and the second semiconductor material.
A solid state lighting (“SSL”) die, comprising:
- a first semiconductor material;
- a second semiconductor material spaced apart from the first semiconductor material;
- an active region between the first and second semiconductor materials;
- an opening extending from the second semiconductor material into the first semiconductor material through the active region;
- a first electrode having a first portion in the opening and a second portion external to the opening;
- a second electrode having a first part covered by the second semiconductor material and a second part extending laterally from the first part;
- and
- wherein the second portion of the first electrode and the second part of the second electrode are both at least partially exposed through the first semiconductor material, the active region, and the second semiconductor material.
A method of forming a light emitting device having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials, the method comprising:
- forming an opening extending completely through the second semiconductor material and the active region and only a portion of the first semiconductor material;
- depositing a passivation material onto the light emitting device, the passivation material having a first passivation portion lining a sidewall of the opening and a second passivation portion extending laterally relative to the first passivation portion external to the opening;
- forming a first electrode in the opening and adjacent the first passivation portion;
- forming a second electrode external to the opening on the second semiconductor material;
- and
- exposing a portion of the second electrode through the first semiconductor material, the active region, and the second semiconductor material.
Dependencies are inferred from the claim text.