Silicon-germanium, quantum-well, light-emitting diode
AssigneeHewlett-Packard Development Company, L.P.
InventorsAlexandre M. Bratkovski, Viatcheslav Osipov
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Abstract
A silicon-germanium, quantum-well, light-emitting diode. The light-emitting diode includes a p-doped portion, a quantum-well portion, and an p-doped portion. The quantum-well portion is disposed between the p-doped portion and the n-doped portion. The quantum-well portion includes a carrier confinement region that is configured to facilitate luminescence with emission of light produced by direct recombination with a hole confined within the carrier confinement region. The p-doped portion includes a first alloy of silicon-germanium, and the n-doped portion includes a second alloy of silicon-germanium.
Claims15
A silicon-germanium, quantum-well, light-emitting diode comprising:
- a p-doped portion, a quantum-well portion, and a n-doped portion, said quantum-well portion disposed between said p-doped portion and said n-doped portion;
- wherein said quantum-well portion comprises a carrier confinement region configured to facilitate luminescence with emission of light produced by direct recombination of an electron with a hole confined within said carrier confinement region;
- wherein said p-doped portion comprises a first alloy of silicon-germanium, and said n-doped portion comprises a second alloy of silicon-germanium.
A combined silicon-germanium, quantum-well, light-emitting diode and light modulator device, said device comprising:
- a silicon-germanium, quantum-well, light-emitting diode integrated with said light modulator, said silicon-germanium, quantum-well, light-emitting diode comprising:
- a p-doped portion, a quantum-well portion, and a n-doped portion, said quantum-well portion disposed between said p-doped portion and said n-doped portion;
- wherein said quantum-well portion comprises a carrier confinement region configured to facilitate luminescence with the emission of light produced by direct recombination of an electron with a hole confined within said carrier confinement region;
- wherein said p-doped portion comprises a first alloy of silicon-germanium, and said n-doped portion comprises a second alloy of silicon-germanium;
- and
- a light modulator optically coupled with said silicon-germanium, quantum-well, light-emitting diode.
A combined silicon-germanium, quantum-well, light-emitting diode, light modulator and integrated-circuit device, said device comprising:
- an integrated-circuit;
- and
- a combined silicon-germanium, quantum-well, light-emitting diode and light modulator device, said device comprising:
- a silicon-germanium, quantum-well, light-emitting diode integrated with said light modulator, said silicon-germanium, quantum-well, light-emitting diode comprising:
- a p-doped portion, a quantum-well portion, and a p-doped portion, said quantum-well portion disposed between said p-doped portion and said n-doped portion;
- wherein said quantum-well portion comprises a carrier confinement region configured to facilitate luminescence with the emission of light produced by direct recombination of an electron with a hole confined within said carrier confinement region;
- wherein said p-doped portion comprises a first alloy of silicon-germanium, and said n-doped portion comprises a second alloy of silicon-germanium;
- and
- a light modulator optically coupled with said silicon-germanium, quantum-well, light-emitting diode;
- wherein said light modulator is configured to receive a signal from said integrated circuit for modulating emitted light.
Dependencies are inferred from the claim text.