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US 8,476,640 B2Granted
Solid state lighting devices and associated methods of manufacturing
AssigneeMicron Technology, Inc.
InventorsNiraj Rana, Zaiyuan Ren
Life of this patent
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Abstract
Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface.
Claims15
A solid-state lighting (SSL) device, comprising:
- an N-type gallium nitride (GaN) material;
- a P-type GaN material spaced apart from the N-type GaN material;
- and
- an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material;
- wherein at least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface with a plurality of symmetric protrusions, wherein the symmetric protrusions are formed with tips, and wherein the symmetric protrusions at least partially reduce a total tensile stress among the N-type GaN, InGaN, and P-type GaN materials by at least partially canceling opposite tensile stresses at the tips along the non-planar surface.
2 more elements
A microelectronic assembly, comprising:
- a silicon substrate having a surface with a plurality of indentations, the silicon substrate having an Si(1,0,0) lattice orientation at the surface, wherein the indentations are defined by at least one plane with an Si(1,1,1) lattice orientation;
- and
- a solid-state lighting (SSL) structure carried by the silicon substrate, the SSL structure having an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material between the N-type GaN material and the P-type GaN material, wherein at least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface with a plurality of symmetric protrusions, wherein the symmetric protrusions are formed with tips, and wherein the symmetric protrusions at least partially reduce a total tensile stress among the N-type GaN, InGaN, and P-type GaN materials by at least partially canceling opposite tensile stresses at the tips along the non-planar surface.
Dependencies are inferred from the claim text.