Semiconductor device and manufacturing method thereof

A semiconductor device comprising:

• a conductive film functioning as an antenna;
• a power source generating circuit electrically connected to the conductive film functioning as an antenna, the power source generating circuit including a constant voltage circuit and a displaying power source circuit;
• an integrated circuit and a display element electrically connected to the power source generating circuit wherein the constant voltage circuit is configured to supply a first voltage to the integrated circuit and the displaying power source circuit is configured to supply a second voltage to the display element;
• a first thin film transistor provided in the power source generating circuit;
• a second thin film transistor provided in the integrated circuit;
• a third thin film transistor provided in the display element;
• an insulating film provided to cover the first thin film transistor, the second thin film transistor, and the third thin film transistor;
• a source electrode and a drain electrode of the first thin film transistor, a source electrode and a drain electrode of the second thin film transistor, and a source electrode and a drain electrode of the third thin film transistor which are formed over the insulating film;
• and
• a pixel electrode electrically connected to the source electrode or the drain electrode of the third thin film transistor,
• wherein the source electrode or the drain electrode of the first thin film transistor is electrically connected to the conductive film functioning as an antenna.