Thin-film transistor, method of fabricating the thin-film transistor, and display substrate using the thin-film transistor
OwnerPil-Sang Yun, Young-Wook Lee +1inventors
InventorsPil-Sang Yun, Young-Wook Lee, Woo-Geun Lee
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Abstract
Provided is an oxide thin-film transistor (TFT) substrate that may enhance the display quality of a display device and a method of fabricating the same via a simple process. The oxide TFT substrate includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.
Claims26
An oxide thin-film transistor (TFT) substrate, comprising:
- a substrate;
- a gate line disposed on the substrate;
- a data line disposed on the substrate and insulated from and intersecting the gate line;
- an oxide TFT electrically connected to the gate line and the data line;
- and
- a pixel electrode electrically connected to the oxide TFT,
- wherein an oxide layer of the oxide TFT comprises:
- a first region with semiconductor characteristics and comprising a channel;
- and
- a second region that is conductive and surrounds the first region,
- wherein the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.
An oxide thin-film transistor (TFT) substrate, comprising:
- a substrate;
- a gate line disposed on the substrate;
- a data line disposed on the substrate and insulated from and intersecting the gate line;
- an oxide TFT electrically connected to the gate line and the data line;
- and
- a pixel electrode electrically connected on the oxide TFT,
- wherein the oxide TFT comprises:
- a gate electrode connected to the gate line;
- a gate insulating film disposed on the gate line and the gate electrode;
- an oxide layer disposed on the gate insulating film and overlapping the gate electrode;
- a first passivation film disposed on the oxide layer and partially overlapping the oxide layer;
- and
- a source electrode connected to the data line and partially overlapping the oxide layer,
- wherein the oxide layer comprises:
- a first region with semiconductor characteristics and comprising a channel;
- and
- a second region that is conductive and surrounds the first region,
- wherein the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.
Dependencies are inferred from the claim text.