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US 8,476,619 B2Granted
Semiconductor device and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorKi-Beom Choe
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Abstract
A semiconductor device includes a gate formed over a substrate, organic semiconductor pattern interposed between the substrate and the gate, junction regions formed in the substrate on both sides of the gate, and junction patterns formed over the junction regions to contact the organic semiconductor patterns.
Claims9
A semiconductor device comprising:
- a gate formed over a substrate;
- organic semiconductor patterns interposed between the substrate and the gate;
- junction regions formed in the substrate below both sides of the gate;
- and
- junction patterns formed over the junction regions to contact the organic semiconductor patterns.
2 more elements
Dependencies are inferred from the claim text.