Reproducible resistance variable insulating memory devices and methods for forming same
AssigneeMicron Technology, Inc.
InventorJun Liu
Life of this patent
Estimating the term…
Abstract
The present invention relates to the use of a shaped bottom electrode in a resistance variable memory device. The shaped bottom electrode ensures that the thickness of the insulating material at the tip of the bottom electrode is thinnest, creating the largest electric field at the tip of the bottom electrode. The arrangement of electrodes and the structure of the memory element makes it possible to create conduction paths with stable, consistent and reproducible switching and memory properties in the memory device.
Claims20
A memory circuit, comprising:
- a substrate;
- a dielectric material in direct contact with the substrate;
- a first electrode over the substrate and within an opening in said dielectric material, the first electrode having a singular cone-like shape;
- a second electrode;
- and
- a resistance variable material between the first and second electrodes.
A memory circuit, comprising:
- a first electrode having a singular cone-like shape with a radially-outward surface between first and second ends of the first electrode;
- a second electrode;
- and
- a resistance variable material between the first and second electrodes, and in direct contact with the entire radially-outward surface,
- wherein the first electrode is within an opening in a dielectric material, and
- wherein the dielectric material is in direct contact with a substrate.
A system, comprising:
- a processing unit;
- and
- a memory circuit, wherein the processing unit is able to communicate with the memory circuit, the memory circuit comprising:
- a dielectric material in direct contact with a substrate;
- a first electrode over the substrate and within an opening in said dielectric material, the first electrode having a singular cone-like shape;
- a second electrode;
- and
- a resistance variable material between the first and second electrodes.
A system, comprising:
- a processing unit;
- and
- a memory circuit, wherein the processing unit is able to communicate with the memory circuit, the memory circuit comprising:
- a first electrode having a singular cone-like shape with a radially-outward surface between first and second ends of the first electrode;
- a second electrode;
- and
- a resistance variable material between the first and second electrodes, and in direct contact with the entire radially-outward surface,
- wherein the first electrode is within an opening in a dielectric material, and
- wherein the dielectric material is in direct contact with a substrate.
A memory circuit, comprising:
- a first electrode having a singular cone-like shape with a radially-outward surface between first and second ends of the first electrode;
- a second electrode;
- and
- a resistance variable material between the first and second electrodes, and in direct contact with the entire radially-outward surface,
- wherein the second end of the first electrode comprises a curved tip.
Dependencies are inferred from the claim text.