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US 8,476,612 B2Granted
Method for forming a lateral phase change memory element
AssigneeSTMicroelectronics S.r.l.
InventorJohn M. Peters
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a phase change memory (PCM) includes forming a pinch plate layer transversely to a PCM layer that is insulated from the pinch plate layer by a dielectric layer. Biasing the pinch plate layer causes a depletion region to form in the PCM layer. During a read of the PCM in a reset or partial reset state the depletion region increases the resistance of the PCM layer significantly.
Claims22
A method, comprising:
- forming a lateral phase change memory cell, the forming including:
- forming a first opening and a second opening in a first dielectric layer, the first opening being separated from the second opening;
- forming a first electrode and a second electrode in the first and second openings, respectively;
- forming a phase change layer on the first dielectric layer and on the first and second electrodes, the phase change layer extending longitudinally in a first direction between the first electrode and the second electrode, the phase change layer having a first region electrically coupled to the first electrode, a second region electrically coupled to the second electrode, and an intermediate region between the first region and the second region;
- forming a second dielectric layer on the phase change layer;
- and
- forming a conductive layer on the second dielectric layer, the conductive layer extending longitudinally in a second direction that is transverse to the first direction, the conductive layer being positioned directly above the intermediate region of the phase change layer, the conductive layer being separated from the phase change layer by the second dielectric layer and from the first and second electrodes by the phase change layer and the second dielectric layer, the conductive layer being electrically isolated from the first and the second electrodes, and the conductive layer being configured to produce a carrier depletion region in the intermediate region of the phase change layer.
4 more elements
A phase change memory, comprising:
- a lateral phase change memory cell that includes:
- a first dielectric layer;
- first and second electrodes formed in the first dielectric layer and spaced apart from one another;
- a phase change layer formed on the first and second electrodes and on the first dielectric layer, the phase change layer extending longitudinally in a first direction between the first and second electrodes, and the phase change layer having a first region electrically coupled to the first electrode, a second region electrically coupled to the second electrode, and an intermediate region positioned between the first region and the second region;
- a second dielectric layer on the phase change layer;
- and
- a conductive layer on the second dielectric layer, the conductive layer extending longitudinally in a second direction that is transverse to the first direction, the conductive layer being positioned directly above the intermediate region of the phase change layer, the conductive layer being separated from the phase change layer by the second dielectric layer, the conductive layer being electrically isolated from the first and the second electrodes, and the conductive layer being configured to produce a carrier depletion region in the intermediate region of the phase change layer.
4 more elements
A system, comprising:
- a phase change memory, including:
- a lateral phase change memory cell that includes:
- a first dielectric layer;
- first and second electrodes formed in the first dielectric layer and spaced apart from one another;
- a phase change layer formed on the first and second electrodes and on the first dielectric layer, the phase change layer extending longitudinally in a first direction between the first and second electrodes, and the phase change layer having a first region electrically coupled to the first electrode, a second region electrically coupled to the second electrode, and an intermediate region positioned between the first electrode and the second electrode;
- a second dielectric layer on the phase change layer;
- and
- a conductive layer on the second dielectric layer, the conductive layer extending longitudinally in a second direction that is transverse to the first direction, the conductive layer being positioned directly above the intermediate region of the phase change layer, and the conductive layer being electrically isolated from the first electrode and the second electrode.
5 more elements
Dependencies are inferred from the claim text.