Scintillator panel, method of producing scintillator panel, radiation image detector and method of producing radiation image detector

A method of producing a scintillator panel comprising the steps of:

• a first layer forming step of heating cesium iodide at a temperature of not less than a melting point of the cesium iodide to evaporate the cesium iodide to form a first layer on a first support, and
• a second layer forming step of heating the cesium iodide at a temperature not less than the melting point of the cesium iodide to evaporate the cesium iodide, while simultaneously heating a mixture of thallium iodide and a coexisting compound which exhibits a melting point higher than that of the thallium iodide and is non-reactive with the thallium iodide at a temperature of not less than a melting point of the thallium iodide and not more than a melting point of the coexisting compound to evaporate the mixture to form a second layer on the first layer.

A radiation image detector comprising a light receiving element in which plural light receiving pixels are two-dimensionally arranged on a second support, and on the light receiving element, a phosphor layer comprising phosphor columnar crystals formed by a process of vapor phase deposition and containing a parent component of cesium iodide (CsI) and an activator of thallium (Tl), and the phosphor layer comprising a first layer of a CsI layer which is in a bottom portion of the phosphor layer and does not contain any activator of thallium and on the first layer, a second layer of a CsI—Tl layer which contains the activator of thallium and exhibits not more than 32% of a coefficient of variation of concentration of thallium in a direction of thickness.

A method of producing a radiation image detector, the method comprising:

• a first layer forming step of forming a light receiving element in which plural light receiving pixels are two-dimensionally arranged on a second support, and then evaporating cesium iodide with heating the cesium iodide at a temperature more than a melting point of the cesium iodide to form a first layer on the light receiving element, and
• a second layer forming step of heating cesium iodide at a temperature more than a melting point of cesium iodide to evaporate the cesium iodide, while simultaneously heating a mixture of cesium iodide and a coexisting compound which exhibits a melting point more than that of thallium iodide and is not reactive with thallium iodide with heating at a temperature not less than a melting point of thallium iodide and not more than that of the coexisting compound to evaporate the mixture to form a second layer on the first layer.