Electromagnetic radiation imaging devices and associated methods
AssigneeSiOnyx, Inc.
InventorsMartin U. Pralle, James Carey, Stephen D. Saylor
Life of this patent
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Abstract
Electromagnetic radiation detection systems and associated methods are provided. In one aspect, for example, an electromagnetic radiation detection system includes a semiconductor material operable to detect electromagnetic radiation, the semiconductor material having a responsivity of greater than or equal to 0.3 A/W at an operating voltage of less than or equal to about 50 volts and at a wavelength of from about 0.01 nm to about 100 nm. The system can further include an electromagnetic radiation source positioned to deliver electromagnetic radiation to the semiconductor material.
Claims25
An electromagnetic radiation detection system, comprising:
- a silicon semiconductor material operable to detect electromagnetic radiation, the semiconductor material having a responsivity of greater than or equal to 0.3 A/W at an operating voltage of less than or equal to about 50 volts and at a wavelength of from about 0.01 nm to about 100 nm.
An electromagnetic radiation detection system, comprising:
- a wavelength converting material operable to absorb a first electromagnetic radiation wavelength in a range of from about 0.01 nm to about 100 nm and emit a second electromagnetic radiation wavelength in a range of from greater than about 100 nm to about 1500 nm;
- and
- a semiconductor material operable to detect electromagnetic radiation and positioned relative to the wavelength converting material to receive the second electromagnetic radiation wavelength, the semiconductor material having a responsivity of greater than or equal to 0.8 A/W at an operating voltage of less than or equal to about 50 volts and at a wavelength of from about 100 nm to about 1500 nm.
A method for reducing electromagnetic radiation exposure to a subject, comprising:
- providing an electromagnetic radiation detection system including a semiconductor photodetector material operated at less than 50 volts and configured to generate a responsivity greater than 0.3 A/W at a wavelength in the range of about 0.01 nm to about 100 nm;
- exposing at least a portion of a subject with a sufficient amount of electromagnetic x-ray radiation to generate an electrical response within the semiconductor photodetector material;
- and
- generating an image from the electrical response of the semiconductor photodetector material.
Dependencies are inferred from the claim text.