Photoelectric conversion film-stacked type solid-state imaging device and method of manufacturing the same

A solid-state imaging device comprising:

• a plurality of light-receiving layers stacked in an optical axis direction via insulating films and each obtain a different color signal and each including a photoelectric conversion part that receives light entering the back side of the layer and generates signal charges and a read transistor that is provided on the front side of the layer and reads the signal charges generated at the photoelectric conversion part;
• a semiconductor layer stacked via an insulating film on the front side of the top layer of said plurality of light-receiving layers;
• a signal scanning circuit provided at the semiconductor layer and processing a signal read by each of the read transistors and outputs a different color signal from each of the light-receiving layers to the outside;
• vias made so as to penetrate at least one of the insulating films and connecting the read transistors in the individual light-receiving layers to the signal scanning circuit;
• and
• an interconnection layer on one side of the signal scanning circuit opposite the light-receiving layers and comprising a plurality of interconnections, wherein the vias are connected to one of the interconnections of the interconnection layer and to the signal scanning circuit via the interconnection layer,
• wherein the light-receiving layers comprise a lower receiving layer and an upper receiving layer and light enters a back side of the bottom light-receiving layer via an imaging optical system, and
• color signals generated at the lower receiving layer is a signal with a predominant wavelength of blue and green, and color signals generated at the upper receiving layer is a signal with a predominant wavelength of red.