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US 8,476,467 B2Granted
Organometallic precursors for use in chemical phase deposition processes
AssigneeSigma-Aldrich Co.
InventorsRavi Kanjolia, Rajesh Odedra, Neil Boag
Life of this patent
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Abstract
An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)nM(CO)2(X) (Formula I) wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).
Claims9
An organometallic complex represented by Formula I:
- Cp(R)nM(CO)2(X) (Formula I)
- wherein:
- M is Ru or Os;
- R is C1-C10-alkyl;
- X is C1-C10-alkyl;
- and
- n is 1, 2, 3 or 4.
4 more elements
Dependencies are inferred from the claim text.