Deposition of Ta- or Nb-doped high-k films
AssigneeL'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Porcédés Georges Claude
InventorChristian Dussarrat
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Abstract
Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films, The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes.
Claims2
A precursor for depositing a high-k film comprising:
- a compound having the formula:
- M1(OR)4L
- wherein M1 is selected from the group consisting of Ta and Nb, R is an alkyl group, and L has the formula —NR0—(CR1R2)n—N—(R3)(R4) wherein R0 is a hydrogen atom, or an alkyl group having 1 to 4 carbon atoms, R1 and R2 may each independently be a hydrogen atom, a methyl group, or an ethyl group, n is an integer ranging from 0 to 3, R3 is a hydrogen atom, or an alkyl group having from 1 to 4 carbon atoms, and R4 is a hydrogen atom, or an alkyl group having 1 to 4 carbon atoms and wherein R0-4 may be the same or different from one another.
Dependencies are inferred from the claim text.