Low-k dielectrics obtainable by twin polymerization
AssigneeBASF SE
InventorsAndreas Klipp, Arno Lange, Hans-Joachim Haehnle
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Abstract
The invention relates to a dielectric layer with a permittivity of 3.5 or less comprising a dielectric obtainable by polymerizing at least one twin monomer comprising a) a first monomer unit which comprises a metal or semimetal, and b) a second monomer unit which is connected to the first monomer unit via a chemical bond, wherein the polymerization involves polymerizing the twin monomer with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize via a common mechanism.
Claims19
A solid dielectric layer with a permittivity of 3.5 or less comprising a solid dielectric obtained by a process comprising polymerizing at least one twin monomer comprising
- a) a first monomer unit which comprises a metal or semimetal, and
- b) a second monomer unit which is connected to the first monomer unit via a chemical bond,
- wherein the polymerization involves polymerizing the twin monomer with breakage of the chemical bond and formation of a first polymer comprising the first monomer unit and of a second polymer comprising the second monomer unit, and wherein the first and the second monomer unit polymerize via a common mechanism.
Dependencies are inferred from the claim text.