Resist pattern thickening material, semiconductor device, and production method thereof

A method for producing a semiconductor device, comprising:

• applying a resist pattern thickening material to a resist pattern formed on a processing surface so as to cover a surface of the resist pattern with the resist pattern thickening material to thereby thicken the resist pattern,
• wherein the resist pattern thickening material comprises:
• a resin;
• a cyclic compound expressed by the following general formula 1;
• at least one of a compound expressed by the following general formula 2 and a compound expressed by the following general formula 3;
• and
• water,
• where Q represents at least one of a hydrogen atom, an alkyl group, an acetyl group, and a hydroxyalkyl group, and k represents an integer of 6, 7, or 8,
• where R represents a cyclic structure, A represents a monovalent organic group containing a carboxyl group, m represents an integer of 1 or larger, B represents at least one of a hydroxyl group, an alkyl group, an alkoxy group, an amino group, an alkyl group-substituted amino group in which a number of the alkyl group is 1 or 2, a carbonyl group, and an alkoxycarbonyl group, and n represents an integer of 0 or larger,
• where S represents an aromatic hydrocarbon structure, X represents a compound expressed by the general formula 4, Y represents at least one of a hydroxyl group, an amino group, an alkyl group-substituted amino group in which a number of the alkyl group is 1 or 2, an alkoxy group, an alkoxycarbonyl group, and an alkyl group, p represents an integer of 1 or larger, and q represents an integer of 0 or larger, and
• where R1 and R2 are identical to or different from each other, and each represent at least one of a hydrogen atom and a substituent, and Z represents at least one of a hydroxyl group, an amino group, an alkyl group-substituted amino group in which a number of the alkyl group is 1 or 2, and an alkoxy group.

A semiconductor device, comprising:

• a base having a processing surface,
• wherein the semiconductor device is produced by a method comprising:
• applying a resist pattern thickening material to a resist pattern formed on the processing surface of the base so as to cover a surface of the resist pattern with the resist pattern thickening material to thereby thicken the resist pattern,
• wherein the resist pattern thickening material comprises:
• a resin;
• a cyclic compound expressed by the following general formula 1;
• at least one of a compound expressed by the following general formula 2 and a compound expressed by the following general formula 3;
• and
• water,
• where Q represents at least one of a hydrogen atom, an alkyl group, an acetyl group, and a hydroxyalkyl group, and k represents an integer of 6, 7, or 8,
• where R represents a cyclic structure, A represents a monovalent organic group containing a carboxyl group, m represents an integer of 1 or larger, B represents at least one of a hydroxyl group, an alkyl group, an alkoxy group, an amino group, an alkyl group-substituted amino group in which a number of the alkyl group is 1 or 2, a carbonyl group, and an alkoxycarbonyl group, and n represents an integer of 0 or larger,
• where S represents an aromatic hydrocarbon structure, X represents a compound expressed by the general formula 4, Y represents at least one of a hydroxyl group, an amino group, an alkyl group-substituted amino group in which a number of the alkyl group is 1 or 2, an alkoxy group, an alkoxycarbonyl group, and an alkyl group, p represents an integer of 1 or larger, and q represents an integer of 0 or larger, and
• where R1 and R2 are identical to or different from each other, and each represent at least one of a hydrogen atom and a substituent, and Z represents at least one of a hydroxyl group, an amino group, an alkyl group-substituted amino group in which a number of the alkyl group is 1 or 2, and an alkoxy group.