Method of making strained silicon channel semiconductor structure
AssigneeUnited Microelectronics Corp.
InventorsChan-Lon Yang, Ted Ming-Lang Guo, Chin-I Liao, Chin-Cheng Chien, Shu-Yen Chan, Chun-Yuan Wu
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Abstract
A method for fabricating a strained channel semiconductor structure includes providing a substrate, forming at least one gate structure on said substrate, performing an etching process to form two recesses in said substrate at opposites sides of said gate structure, the sidewall of said recess being concaved in the direction to said gate structure and forming an included angle with respect to horizontal plane, and performing a pre-bake process to modify the recess such that said included angle between the sidewall of said recess and the horizontal plane is increased.
Claims14
A method of making strained silicon semiconductor structure, comprising the steps of:
- providing a substrate;
- forming at least one gate structure on said substrate;
- performing an etching process to form at least one recess in said substrate at lateral sides of said at least one gate structure, wherein said at least one recess has an upper sidewall and a lower sidewall concaved in the direction to said at least one gate structure, and said upper sidewall and said horizontal sidewall form an included angle;
- performing a pre-bake process at temperature ranging between 700° C.-1000° C. to increase said included angle;
- and
- performing an epitaxy growth process to form an epitaxial layer as a stress source in said at least one recess.
A method of making strained silicon semiconductor structure, comprising the steps of:
- providing a substrate;
- forming at least one gate structure on said substrate;
- performing a first etching process to form at least one recess in said substrate at lateral sides of said at least one gate structure;
- performing a second etching process to further etch said at least one recess and form a diamond-shape recess after performing said first etching process;
- performing a pre-bake process at temperature ranging between 700° C.-1000° C. to transforms said diamond-shape recess into a diamond-like recess;
- and
- performing an epitaxy growth process to form an epitaxial layer as a stress source in said diamond-like recess.
Dependencies are inferred from the claim text.