Manufacturing method of semiconductor device
AssigneeSumitomo Electric Device Innovations, Inc.
InventorsToshiyuki Kosaka, Haruo Kawata, Tsutomu Komatani
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Abstract
A manufacturing method of a semiconductor device includes: forming step of forming an etching mask on a second main face of a substrate, the etching mask being made of Cu or Cu alloy and having an opening, the second main face being on an opposite side of a first main face of the substrate where a nitride semiconductor layer is provided; a first etching step of applying a dry etching to the second main face of the substrate with use of the etching mask so that all of or a part of the nitride semiconductor layer is left; a removing step of removing the etching mask after the first etching step; and a second etching step of dry-etching the left nitride semiconductor layer after the removing step.
Claims12
A manufacturing method of a semiconductor device comprising:
- forming step of forming an etching mask on a second main face of a substrate, the etching mask being made of Cu or Cu alloy and having an opening, the second main face being on an opposite side of a first main face of the substrate where a nitride semiconductor layer is provided;
- a first etching step of applying a dry etching to the second main face of the substrate with use of the etching mask so that all of or a part of the nitride semiconductor layer is left;
- a removing step of completely removing the etching mask from the second main face of the substrate after the first etching step;
- and
- a second etching step of dry-etching the left nitride semiconductor layer after the removing step.
Dependencies are inferred from the claim text.