Methods of forming layers on substrates
AssigneeApplied Materials, Inc.
InventorsTae Hong Ha, Winsor Lam, Tza-Jing Gung, Joung Joo Lee
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Abstract
Methods for forming layers on a substrate are provided herein. In some embodiments, methods of forming layers on a substrate disposed in a process chamber may include depositing a barrier layer comprising titanium within one or more features in the substrate; and sputtering a material from a target in the presence of a plasma formed from a process gas by applying a DC power to the target, maintaining a pressure of less than about 500 mTorr within the process chamber, and providing up to about 5000 W of a substrate bias RF power to deposit a seed layer comprising the material atop the barrier layer.
Claims20
A method of forming layers on a substrate disposed in a process chamber, comprising:
- depositing a barrier layer comprising titanium within one or more features in the substrate;
- and
- sputtering a material from a target in the presence of a plasma formed from a process gas by applying a DC power to the target, maintaining a pressure of less than about 500 mTorr within the process chamber, and providing up to about 5000 W of a substrate bias RF power to deposit a seed layer comprising the material atop the barrier layer.
A computer readable medium, having instructions stored thereon which, when executed by a controller, causes a process chamber having a substrate disposed therein to have layers formed thereon by a method, the method comprising:
- depositing a barrier layer comprising titanium within one or more features in the substrate;
- and
- sputtering a material from a target in the presence of a plasma formed from a process gas by applying a DC power to the target, maintaining a pressure of less than about 500 mTorr within the process chamber, and providing up to about 5000 W of a substrate bias RF power to deposit a seed layer comprising the material atop the barrier layer.
A method of forming layers on a substrate disposed in a process chamber, comprising:
- depositing a barrier layer comprising titanium within one or more features in the substrate, wherein the features have an aspect ratio of at least about 4:1;
- sputtering a material comprising copper (Cu) from a target in the presence of a plasma formed from a process gas by applying a about 500 W to about 80 kW of DC power to the target and maintaining a pressure of less than about 500 mTorr within the process chamber;
- rotating a magnetron disposed proximate the target to form a magnetic field proximate the target to increase a density of the plasma proximate a surface of the target;
- providing up to about 5000 W of a substrate bias RF power having a frequency of about 1 to about 60 MHz to deposit a seed layer comprising the material atop the barrier layer;
- and
- depositing a conductive material atop the seed layer to fill the feature.
Dependencies are inferred from the claim text.