US 8,476,158 B2 · Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture

Abstract

A GaN substrate storage method of storing, within an atmosphere in which the oxygen concentration is not greater than 15 vol. % and the water-vapor concentration is not greater than 20 g/m3, a GaN substrate (1) having a planar first principal face (1m), and whose plane orientation in an arbitrary point (P) along the first principal face (1m) and separated 3 mm or more from the outer edge thereof has an off-inclination angle Δα of −10° or more, 10° or less with respect to the plane orientation of an arbitrarily designated crystalline plane (1a) that is inclined 50° or more, 90° or less with respect to a plane (1c), being either the (0001) plane or the (000 1) plane, through the arbitrary point. In this way a method of storing GaN substrates whose principal-face plane orientation is other than (0001) or (000 1), with which semiconductor devices of favorable properties can be manufactured is made available.

Claims13

Dependent claims

A GaN substrate preparation and storage method comprising:

a substrate-preparation step of preparing a GaN substrate, defining first and second principal faces as distinct from the substrate edge, so as to have a planar first principal face and a plane orientation, in an arbitrary point along the first principal face and separated 3 mm or more from the outer edge thereof, having an off-inclination angle of between −10° and 10°, inclusive, with respect to the plane orientation of an arbitrarily designated crystalline plane that is inclined between 50° and 90°, inclusive, with respect to a plane, being either the (0001) plane or the (000 1) plane, through the arbitrary point;
a storage-atmosphere preparation step of preparing a GaN-substrate storage atmosphere of not greater than 15 vol. % oxygen concentration and not greater than 20 g/m3 water-vapor concentration;
and
a storage step of storing the prepared GaN substrate within the atmosphere prepared in said storage-atmosphere preparation step.

1 more element

Dependencies are inferred from the claim text.

Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture

Life of this patent

Method of preparing and storing GaN substrate, prepared and stored GaN substrate, and semiconductor device and method of its manufacture

Life of this patent

Abstract

Claims13