N-type carrier enhancement in semiconductors
AssigneeInternational Business Machines Corporation
InventorsJee Hwan Kim, Stephen W. Bedell, Siegfried Maurer, Devendra K. Sadana
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Abstract
A method includes epitaxially growing a germanium (Ge) layer onto a Ge substrate and incorporating a compensating species with a compensating atomic radius into the Ge layer. The method includes implanting an n-type dopant species with a dopant atomic radius into the Ge layer. The method includes selecting the n-type dopant species and the compensating species in such manner that the size of the Ge atomic radius is inbetween the n-type dopant atomic radius and the compensating atomic radius.
Claims3
A method for generating n-type carriers in germanium (Ge), comprising:
- supplying a Ge substrate, wherein said Ge substrate has a Ge atomic radius;
- epitaxially growing a Ge layer onto said Ge substrate and incorporating a compensating species into said Ge layer during said epitaxial growth, wherein said compensating species has a compensating atomic radius;
- implanting phosphorous (P) into said Ge layer, wherein said P has a dopant atomic radius;
- selecting said compensating species in such manner that the size of said Ge atomic radius is inbetween said dopant atomic radius and said compensating atomic radius;
- and
- selecting a dose for said P in such manner that a concentration of said n-type carriers in said Ge layer exceeds 70% of the equilibrium solubility of P in Ge.
Dependencies are inferred from the claim text.