Methods of forming a semiconductor device
AssigneeIntersil Americas Inc.
InventorsRick C. Jerome, Francois Hebert, Craig McLachlan, Kevin Hoopingarner
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Abstract
A method and structure for a semiconductor device, the device including a handle wafer, a diamond layer formed directly on a front side of the handle wafer, and a thick oxide layer formed directly on a back side of the handle wafer, the oxide of a thickness to counteract tensile stresses of the diamond layer. Nitride layers are formed on the outer surfaces of the diamond layer and thick oxide layer and a polysilicon is formed on outer surfaces of the nitride layers. A device wafer is bonded to the handle wafer to form the semiconductor device.
Claims26
A method of forming a semiconductor device, comprising:
- forming an oxide layer on a back side of a handle wafer substrate;
- growing a diamond layer on a front side of the handle wafer substrate, the oxide layer comprising a thickness to counteract tensile stresses of the diamond layer;
- and
- bonding the handle wafer to a device wafer to form the semiconductor device;
- depositing a nitride layer on the front and back side of the handle wafer;
- and
- depositing a polysilicon on the front and back side of the handle wafer, followed by polishing the front side polysilicon to a thickness less than the back side polysilicon.
A method of forming a semiconductor device, comprising:
- forming an oxide layer on a back side of a handle wafer substrate;
- growing a diamond layer on a front side of the handle wafer substrate, the oxide layer comprising a thickness to counteract tensile stresses of the diamond layer;
- and
- bonding the handle wafer to a device wafer to form the semiconductor device;
- wherein forming an oxide layer on the back side of the handle wafer substrate comprises forming an oxide layer on both a front and back side of the handle wafer substrate, and removing the formed oxide layer from the front side of the handle wafer substrate.
Dependencies are inferred from the claim text.