US 8,476,149 B2 · Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process

Abstract

A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T1) of 1300° C. or more, but less than 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7×1018 atoms/cm3 or more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

Claims10

Dependent claims

A method for manufacturing a silicon wafer comprising:

subjecting a silicon wafer produced from a silicon single crystal ingot grown by a Czochralski process to a rapid heating/cooling thermal process of retaining the silicon wafer for 1 second to 60 seconds at a maximum temperature of 1300° C. to 1380° C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% to 100%,
wherein
in the rapid heating/cooling thermal process, a temperature raise rate is 10° C./sec or more and a temperature drop rate is 10° C./sec or more;
and
the silicon single crystal ingot is grown by the Czochralski process pulling
at a rate of 1.2 mm/min or more on average when a silicon wafer having a diameter of 300 mm is produced, and
at a rate of 1.8 mm/min or more on average when a silicon wafer having a diameter of 200 mm is produced.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

12/512,492Filed 30 Jul 2009

Priority

JP 2008-19868031 Jul 2008

Published

US 2010/0038757 A118 Feb 2010

Granted

2 Jul 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10P 95/90
Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass: thermal treatments, e.g. annealing…
C30B 29/06
Elements: silicon
C30B 33/02
After-treatment of single crystals or homogeneous polycrystalline material with defined structure: heat treatment
H10P 36/20
Gettering within semiconductor bodies: intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body

Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process

Life of this patent

Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process

Life of this patent

Abstract

Claims10