Method for transferring a layer from a donor substrate onto a handle substrate
AssigneeSoitec
InventorsSébastien Kerdiles, Walter Schwarzenbach, Aziz Alami-Idrissi
Life of this patent
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Abstract
The invention relates to a method for transferring a layer from a donor substrate onto a handle substrate wherein, after detachment, the remainder of the donor substrate is reused. To get rid of undesired protruding edge regions which are due to the chamfered geometry of the substrates, the invention proposes to carry out an additional etching process before detachment occurs.
Claims20
A method of transferring a layer from a donor substrate onto a handle substrate and for reclaiming a surface of the donor substrate for reuse, comprising:
- providing a semiconductor donor substrate and a handle substrate each comprising a chamfered edge region;
- forming a predetermined splitting area at a depth inside the donor substrate;
- bonding the donor substrate and the handle substrate to obtain a donor-handle compound structure, wherein no bonding occurs between the donor substrate and the handle substrate in the chamfered edge regions of the donor substrate and the handle substrate;
- after bonding the donor substrate and the handle substrate, performing an isotropic etching process on the donor substrate and removing a layer of the donor substrate from the chamfered region of the donor substrate having a thickness of at least about the depth at which the splitting area is formed inside the donor substrate, the removed layer of the donor substrate including a portion of the predetermined splitting area in the chamfered edge region of the donor substrate;
- after performing the isotropic etching process on the donor substrate, detaching a remainder of the etched donor substrate from the donor-handle compound structure at the predetermined splitting area;
- treating a surface of the remainder of the etched donor substrate;
- and
- reusing the remainder of the etched donor substrate.
A method of transferring a layer from a donor substrate onto a handle substrate and for reclaiming a surface of the donor substrate for reuse, comprising:
- providing a semiconductor donor substrate and a handle substrate, at least the donor substrate comprising a chamfered edge region;
- forming a predetermined splitting area at an average first depth inside the donor substrate;
- bonding the donor substrate and the handle substrate without bonding the chamfered edge region of the donor substrate to the handle substrate;
- while the donor substrate remains bonded to the handle substrate, isotropically etching at least one exposed surface of the donor substrate and removing material from the at least one exposed surface of the donor substrate to an average second depth that is greater than the average first depth and removing a portion of the predetermined splitting area in the chamfered edge region of the donor substrate;
- and
- detaching the etched donor substrate from the handle substrate at the predetermined splitting area after isotropically etching the at least one exposed surface of the donor substrate and transferring a portion of the donor substrate to the handle substrate.
Dependencies are inferred from the claim text.