Method of fabricating a semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Brian Cronquist, Isreal Beinglass, Jan Lodewijk de Jong, Deepak C. Sekar
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Abstract
A method to fabricate a semiconductor device, including the sequence of: implanting one or more regions on a semiconductor wafer forming a doped layer; performing a first transfer of the doped layer onto a carrier; and then performing a second transfer of the doped layer from the carrier to a target wafer; and then etching said one or more regions of the doped layer to form transistors on the doped layer.
Claims28
A method to fabricate a semiconductor device, comprising the sequence of:
- implanting one or more regions on a semiconductor wafer forming a doped layer;
- performing a first transfer of said doped layer onto a carrier;
- and then performing a second transfer of said doped layer from said carrier to a target wafer;
- and then
- etching said one or more regions of said doped layer to form transistors on said doped layer.
A method to fabricate a semiconductor device, comprising the sequence of:
- implanting one or more regions in a semiconductor wafer to form a doped regions layer;
- performing a first layer transfer of said doped regions layer using ion-cut onto a carrier;
- and then
- performing a second layer transfer of said doped regions layer from said carrier onto a target wafer.
A method to fabricate a semiconductor device, comprising the sequence of:
- implanting one or more regions in a semiconductor wafer to partially form transistors;
- performing a first layer transfer from said semiconductor wafer onto a carrier;
- and then
- performing a greater than 400° C. temperature anneal, and then
- performing a second layer transfer from said carrier onto a target wafer.
Dependencies are inferred from the claim text.