Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device

A method of manufacturing a semiconductor device including memory cells including MISFETs, comprising steps of:

• (a) forming a first film over a conductive film formed over a main surface of a semiconductor substrate;
• (b) patterning a first film along a first direction by using a first resist film as a mask;
• (c) after the step (b), removing the first resist film;
• (d) after the step (c), patterning the first film along a second direction substantially perpendicular to the first direction by using a second resist film as a mask;
• and
• (e) after the step (d), removing the second resist film;
• (f) after the step (e), patterning the conductive film by using the first film patterned in the step (e) to form gate patterns for gate electrodes of the MISFETs,
• wherein the memory cell comprises a memory cell of a static random memory, wherein the memory cell includes a first drive MISFET, a second drive MISFET, a first transfer MISFET and a second transfer MISFET such that the first drive MISFET and the first transfer MISFET are cross-coupled to the second drive MISFET and the second transfer MISFET, and
• wherein the first drive MISFET and the first transfer MISFET are arranged with point symmetry to the second drive MISFET and the second transfer MISFET, respectively, with respect to a center point in a memory cell forming region.