Production method for semiconductor device

A method of producing a semiconductor device, comprising the steps of:

• providing a substrate on one side of which at least one semiconductor pillar stands, the semiconductor pillar having a stopper film formed on a top surface thereof;
• forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar;
• forming a conductive film on the first dielectric film;
• forming a second dielectric film on the conductive film to allow the semiconductor pillar to be buried therein;
• flattening a top surface of the resulting product by chemical mechanical polishing (CMP), using the stopper film as a CMP stopper;
• removing by etching a portion of the second dielectric film and the conductive film each located along an upper portion of a side surface of the semiconductor pillar to form the conductive film and the second dielectric film to have substantially the same height;
• forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar;
• etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar;
• removing the second dielectric film;
• forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography;
• and
• partially removing by etching the conductive film using the resist pattern as a mask while protecting, by the protective film-based sidewall, the portions of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar, to form a gate electrode and the gate line extending from the gate electrode.

A method of producing a semiconductor device, comprising the steps of:

• providing a substrate on one side of which at least one semiconductor pillar stands;
• forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar;
• forming a conductive film on the first dielectric film to allow the semiconductor pillar to be buried therein;
• etching an upper portion of the conductive film to remove a portion of the conductive film located on a top surface and along an upper portion of a side surface of the semiconductor pillar;
• forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar;
• etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar;
• forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography;
• and
• partially removing by etching, using the resist pattern as a mask, the conductive film to form at least a portion of the gate line, and partially removing by etching, using the protective film-based sidewall as a mask, the conductive film to form at least a portion of a gate electrode to have the desired film thickness, where the gate line extends from the gate electrode.

A method of producing a semiconductor device, comprising the steps of:

• providing a substrate on one side of which at least one semiconductor pillar stands, the semiconductor pillar having a stopper film formed on a top surface thereof;
• forming a first dielectric film to at least partially cover a surface of the at least one semiconductor pillar;
• forming a conductive film on the first dielectric film to allow the semiconductor pillar to be buried therein;
• flattening a top surface of the resulting product by chemical mechanical polishing (CMP), using the stopper film as a CMP stopper;
• etching an upper portion of the conductive film to remove a portion of the conductive film located along an upper portion of a side surface of the semiconductor pillar;
• forming a protective film on at least a part of the top surface and the upper portion of the side surface of the semiconductor pillar;
• etching back the protective film to form a protective film-based sidewall on respective top surfaces of the conductive film and the first dielectric film each located along the side surface of the semiconductor pillar;
• forming a resist pattern for forming a gate line in such a manner that at least a portion of the resist pattern is formed on the top surface of the semiconductor pillar by applying a resist and using lithography;
• and
• partially removing by etching, using the resist pattern as a mask, the conductive film to form at least a portion of the gate line, and partially removing by etching, using the protective film-based sidewall as a mask, the conductive film to form at least a portion of a gate electrode to have a desired film thickness, where the gate line extends from the gate electrode.