Fabrication technique for high frequency, high power group III nitride electronic devices
AssigneeUniversity of South Carolina
InventorsM. Asif Khan, Vinod Adivarahan
Life of this patent
Estimating the term…
Abstract
Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).
Claims16
A method of forming a high electron mobility transistor (HEMT) device, the method comprising:
- providing a HEMT structure comprising a substrate, a buffer layer over the substrate, a spacer layer over the buffer layer, and a group III nitride epilayer over the spacer layer;
- positioning a source metal electrode and a drain metal electrode on the group III nitride epilayer;
- etching a first recess in the group III nitride epilayer;
- after formation of the first recess in the group III nitride epilayer, fluorine isolation etching in the first recess;
- thereafter, etching a second recess in the group III nitride epilayer, wherein the second recess is positioned within the first recess;
- thereafter, depositing a dielectric layer in the second recess;
- and
- thereafter, positioning a gate electrode on the dielectric layer deposited in the second recess.
Dependencies are inferred from the claim text.