Method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorJunji Oh
Life of this patent
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Abstract
The method of manufacturing the semiconductor device includes amorphizing a first region and a second region of a semiconductor substrate by an ion implantation, implanting a first impurity and a second impurity respectively in the first region and the second region, activating the implanted impurities to form a first impurity layer and a second impurity layer, epitaxially growing a semiconductor layer above the semiconductor substrate with the impurity layers formed on, growing a gate insulating film above the first region and the second region, and forming a first gate electrode above the gate insulating film in the first region and the second gate electrode above the gate insulating film in the second region.
Claims14
A method of manufacturing a semiconductor device comprising:
- amorphizing a first region and a second region of a semiconductor substrate by an ion implantation into the semiconductor substrate;
- ion implanting a first impurity of a first conduction type in the first region of the semiconductor substrate;
- ion implanting a second impurity of a second conduction type in the second region of the semiconductor substrate;
- activating the first impurity and the second impurity to form a first impurity layer in the first region and a second impurity layer in the second region;
- epitaxially growing a semiconductor layer above the semiconductor substrate with the first impurity layer and the second impurity layer formed in;
- forming a gate insulating film above the semiconductor layer in the first region and the second region;
- and
- forming a first gate electrode above the first gate insulating film in the first region and a second gate electrode above the first gate insulating film in the second region.
A method of manufacturing a semiconductor device comprising:
- amorphizing a first region, a second region, a third region and a fourth region of a semiconductor substrate by an ion implantation into the semiconductor substrate;
- ion implanting a first impurity of a first conduction type in the first region of the semiconductor substrate;
- ion implanting a second impurity of a second conduction type in the second region of the semiconductor substrate;
- ion implanting a third impurity of the first conduction type in the third region of the semiconductor substrate;
- ion implanting a fourth impurity of the second conduction type in the fourth region of the semiconductor substrate;
- activating the first impurity, the second impurity, the third impurity and the fourth impurity to form a first impurity layer in the first region, a second impurity layer in the second region, a third impurity layer in the third region and a fourth impurity layer in the fourth region;
- epitaxially growing a semiconductor layer above the semiconductor substrate with the first impurity layer, the second impurity layer, the third impurity layer and the fourth impurity layer formed in;
- forming a first gate insulating film above the semiconductor layer in the first region, the second region, the third region and the fourth region;
- removing the first gate insulating film in the first region and the second region;
- forming a second gate insulating film thinner than the first gate insulating film above the semiconductor layer in the first region and the second region;
- and
- forming a first gate electrode above the second gate insulating film in the first region, a second gate electrode above the second gate insulating film in the second region, a third gate electrode above the first gate insulating film in the third region and a fourth gate electrode above the first gate insulating film in the fourth region.
Dependencies are inferred from the claim text.