Organic thin film transistors and methods of making them

A method of manufacturing an organic thin film transistor (TFT), comprising:

• providing a substrate layer;
• providing a gate electrode layer;
• providing a dielectric material layer;
• providing an organic semiconductor (OSC) material layer;
• and
• providing a source and drain electrode layer;
• providing a dopant material between the OSC material layer and the source and drain electrode layer using a laser induced thermal imaging (LITI) process;
• wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process.

A method of manufacturing a top-gate organic thin film transistor (TFT), comprising:

• providing a substrate layer;
• depositing a source and/or drain electrode on the substrate layer using a laser induced thermal imaging (LITI) process;
• providing an organic semiconductor (OSC) material layer over the source and drain electrode;
• providing a dielectric material layer over the (OSC) material layer;
• providing a gate electrode on the dielectric material layer:
• and
• providing a dopant material between the OSC material layer and the source and drain electrode layer using a laser induced thermal imaging (LITI) process.

A method of manufacturing a bottom-gate organic thin film transistor (TFT), comprising:

• providing a substrate layer;
• providing a gate electrode on the substrate layer;
• providing a dielectric material layer over the gate electrode;
• depositing a source and/or drain electrode over the dielectric material layer using a laser induced thermal imaging (LITI) process;
• providing an organic semiconductor (OSC) material layer over the source and drain layer;
• and
• providing a dopant material between the OSC material layer and the source and drain electrode layer using a laser induced thermal imaging (LITI) process.