Semiconductor device and method of forming three-dimensional vertically oriented integrated capacitors

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a seed layer over the substrate;
• forming a conductive pillar over the seed layer;
• conformally applying an insulating layer over the conductive pillar;
• conformally applying a conductive layer over the insulating layer as a vertically oriented capacitor;
• and
• removing the substrate to expose the seed layer.

A method of making a semiconductor device, comprising:

• forming a vertically oriented capacitor within the semiconductor device;
• disposing a first semiconductor die or component within the semiconductor device;
• forming a vertical conductive structure within the semiconductor device around the first semiconductor die or component, the vertical conductive structure including a height greater than a height of the vertically oriented capacitor;
• and
• depositing an encapsulant over the vertically oriented capacitor, vertical conductive structure, and first semiconductor die or component.

A method of making a semiconductor device, comprising:

• forming a vertically oriented capacitor within the semiconductor device;
• disposing a first semiconductor die or component within the semiconductor device;
• depositing an encapsulant over the vertically oriented capacitor and first semiconductor die or component;
• forming a first interconnect structure over a first surface of the encapsulant;
• and
• forming a second interconnect structure over a second surface of the encapsulant opposite the first surface of the encapsulant.

A method of making a semiconductor device, comprising:

• forming a conductive pillar within the semiconductor device;
• conformally applying forming an insulating layer over the conductive pillar;
• conformally applying forming a conductive layer over the insulating layer as a vertically oriented capacitor;
• disposing a first semiconductor die over the substrate;
• and
• depositing an encapsulant over the first semiconductor die and vertically oriented capacitor.

A semiconductor device, comprising:

• a conductive pillar disposed within the semiconductor device;
• an insulating layer conformally applied over the conductive pillar;
• a conductive layer conformally applied over the insulating layer as a vertically oriented capacitor;
• a semiconductor die disposed within the semiconductor device;
• and
• an encapsulant deposited over the semiconductor die and vertically oriented capacitor.