Encapsulation methods and dielectric layers for organic electrical devices
AssigneeSRI International
InventorsYigal D. Blum, William Siu-Keung Chu, David Brent MacQueen, Yijian Shi
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Abstract
The disclosure provides methods and materials suitable for use as encapsulation barriers and dielectric layers in electronic devices. In one embodiment, for example, there is provided an electroluminescent device or other electronic device with a dielectric layer comprising alternating layers of a silicon-containing bonding material and a ceramic material. The methods provide, for example, electronic devices with increased stability and shelf-life. The invention is useful, for example, in the field of microelectronic devices.
Claims23
A method for forming a dielectric layer in an electronic device comprising:
- (i) forming a barrier layer by depositing a barrier material directly or indirectly on a substrate, wherein the barrier material is a ceramic material;
- (ii) oxidizing the barrier layer to provide exposed functional groups;
- (iii) forming a bonding layer by depositing a layer of a bonding material on the barrier layer, wherein the bonding material is a silicon-containing material and comprises functional groups capable of reacting with the functional groups of the barrier layer,
- wherein the silicon containing material is a siloxane or polysiloxane comprising monomer units having the structure of formula (I)
- wherein:
- R1 and R2 are independently selected from H, OH, C1-C30 hydrocarbyl, organometallic, halocarbyl, and organosilyl, each of which may be optionally substituted and optionally heteroatom containing;
- X is selected from —O—, and —NR3—;
- R3 is hydrocarbyl;
- and
- n is an integer greater than or equal to 1.
A method for forming a dielectric layer in an electronic device comprising:
- combining a plurality of component layers disposed on a substrate with a dielectric layer comprising at least a first pair of layers of a barrier material and a cross-linked material, wherein the barrier material is a ceramic material and the cross-linked material is a silicon-containing polymer, wherein the silicon-containing polymer comprises cross-linked units having the structure —[Si(R2)(X)1.5]—, wherein:
- R2 is selected from H, hydroxyl, fluorocarbyl, and hydrocarbyl;
- X is selected from —O— and —NR3—;
- and
- R3 is selected from alkyl and aryl.
Dependencies are inferred from the claim text.