Methods and apparatus for a stacked-die interposer

A method of fabricating a semiconductor package, comprising:

• providing an interposer having a plurality of bond pads coupled together via a conductive trace, wherein the interposer comprises:
• an interposer substrate;
• a dielectric layer formed on the interposer substrate;
• a conductive trace formed on the dielectric layer;
• a passivation layer formed on the dielectric layer and having windows formed therethrough to the conductive trace;
• and
• wherein the plurality of bond pads are formed within the conductive windows;
• stacking a first semiconductor device on a top surface of the interposer;
• stacking the interposer on a top surface of a second semiconductor device;
• and
• stacking the second semiconductor device on a top surface of a substrate.

A method of fabricating a semiconductor package, comprising:

• bonding a first semiconductor device to a substrate, wherein the first semiconductor device comprises a first plurality of bond pads, the first plurality of bond pads including a first bond pad and a second bond pad;
• bonding an interposer to the first semiconductor device, wherein the interposer comprises a second plurality of bond pads, the second plurality of bond pads including a third bond pad and a fourth bond pad;
• bonding a second semiconductor device to the interposer, wherein the second semiconductor device comprises a third plurality of bond pads;
• coupling a first bond wire to the first bond pad and to the third bond pad;
• and
• coupling a second bond wire to the second bond pad and to the fourth bond pad;
• wherein the third and the fourth bond pads of the interposer are electrically coupled via a first conductive trace on the interposer.