Method and apparatus for manufacturing semiconductor device
AssigneeJusung Engineering Co., Ltd.
InventorsSang Ki Park, Seong Ryong Hwang, Geun Tae Cho
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Abstract
A method and apparatus for manufacturing a semiconductor device is disclosed, which is capable of realizing an extension of a cleaning cycle for a processing chamber, the method comprising preheating a substrate; placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber; and forming a thin film on the preheated substrate, wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.
Claims20
A method for manufacturing a semiconductor device comprising:
- preheating a substrate;
- placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber;
- and
- forming a thin film on the preheated substrate maintained at a predetermined height from an upper surface of the susceptor by the substrate-supporting unit,
- wherein a temperature of the preheated substrate is higher than a processing temperature for forming the thin film in the processing chamber.
A method for manufacturing a semiconductor device comprising:
- preheating a substrate;
- placing the preheated substrate onto a substrate-supporting unit provided in a susceptor while the preheated substrate is maintained at a predetermined height from an upper surface of the susceptor provided in a processing chamber;
- and
- forming a thin film on the preheated substrate maintained at a predetermined height from an upper surface of the susceptor by the substrate-supporting unit,
- wherein the inside of the processing chamber is maintained at a predetermined temperature which is lower than a temperature of the preheated substrate.
A method for manufacturing a semiconductor device comprising:
- preheating a substrate;
- placing the preheated substrate onto a substrate-supporting unit of a susceptor provided in a processing chamber;
- and
- forming a thin film on the preheated substrate raised at a predetermined height from an upper surface of the susceptor by the substrate-supporting unit,
- wherein the substrate-supporting unit delays a cooling speed of the preheated substrate.
Dependencies are inferred from the claim text.