Method of fabricating patterned CZT and CdTe devices

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• and
• wherein the substrate is provided with passivated front and rear major opposing surfaces, and the cathode electrode is formed on the front passivated surface.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• and
• forming solder mask between the substrate and at least one of a guard ring and steering grid;
• or forming solder mask over at least one of the guard ring and steering grid;
• or forming solder mask between the substrate and at least one of the guard ring and steering grid, and over at least one of the guard ring and steering grid.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• passivating at least the rear major surface of the semiconductor substrate prior to forming the solder mask layer;
• etching the passivated portions of the rear surface of the substrate between solder mask pixel separation regions prior to the step of forming the anode pixels;
• and
• forming the anode pixels directly on exposed portions of the rear major surface.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask layer;
• forming a gold layer on exposed portions of the rear major surface between the solder mask pixel separation regions, on the front major surface and on sidewalls of the semiconductor substrate by electroless plating;
• polishing the gold layer such that a first portion of the gold layer located between the solder mask pixel separation regions on the rear major surface of the substrate forms the anode pixels, a second portion of the gold layer located on the front major surface of the semiconductor substrate forms the cathode electrode, and no gold remains on the sidewalls of the semiconductor substrate;
• and
• forming additional solder mask material on the sidewalls of the substrate after the steps of forming the anode pixels and cathode electrode.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask layer;
• forming first and second passivating layers on the front and rear major surfaces of the semiconductor substrate prior to forming the solder mask layer;
• forming a gold layer on exposed portions of the second passivating layer on the rear major surface between the solder mask pixel separation regions, on the first passivating layer on the front major surface and on sidewalls of the semiconductor substrate by electroless plating;
• polishing the gold layer such that a first portion of the gold layer located between the solder mask pixel separation regions on the second passivating layer on the rear major surface of the substrate forms the anode pixels, a second portion of the gold layer located on the first passivating layer on the front major surface of the semiconductor substrate forms the cathode electrode, and no gold remains on the sidewalls of the semiconductor substrate;
• and
• forming additional solder mask material on the sidewalls of the substrate after the steps of forming the anode pixels and cathode electrode.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask layer;
• forming first and second passivating layers on the front and rear major surfaces of the semiconductor substrate prior to forming the solder mask layer;
• etching exposed portions of the second passivating layer located between the solder mask pixel separation regions to expose portions of the rear major surface of the substrate;
• forming a gold layer on the exposed portions of the rear major surface between the solder mask pixel separation regions, over the first passivating layer on the front major surface and on sidewalls of the semiconductor substrate by electroless plating;
• polishing the gold layer such that a first portion of the gold layer located between the solder mask pixel separation regions on the exposed portions of the rear major surface of the substrate forms the anode pixels, a second portion of the gold layer located over the first passivating layer on the front major surface of the semiconductor substrate forms the cathode electrode, and no gold remains on the sidewalls of the semiconductor substrate;
• and
• forming additional solder mask material on the sidewalls of the substrate after the steps of forming the anode pixels and cathode electrode.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anodepixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask laver;
• forming first and second passivating layers on the front and rear major surfaces of the semiconductor substrate prior to forming the solder mask layer;
• forming a positive photoresist over the solder mask pixel separation regions and over exposed portions of the second passivating layer;
• patterning the positive photoresist to expose the second passivating layer and the solder mask pixel separation regions such that grid and guard ring regions are covered by patterned positive photoresist;
• etching exposed portions of the second passivating layer located between the solder mask pixel separation regions which are not covered by the patterned positive photoresist to expose the rear major surface of the substrate;
• removing the patterned positive photoresist;
• forming a gold layer on the rear major surface of the semiconductor substrate between the solder mask pixel separation regions, on a portion of the second passivating layer in the grid and guard ring region that was previously covered by the patterned positive photoresist, on the first passivating layer on the front major surface of the semiconductor substrate and on sidewalls of the semiconductor substrate by electroless plating;
• polishing the gold layer such that a first portion of the gold layer located between the solder mask pixel separation regions on the rear major surface of the substrate forms the anode pixels, a second portion of the gold layer located over the first passivating layer on the front major surface of the semiconductor substrate forms the cathode electrode, a third portion of the gold layer located over the portion of the second passivating layer forms the grid and guard ring, and no gold remains on the sidewalls of the semiconductor substrate;
• and
• forming additional solder mask material on the sidewalls of the substrate after the steps of forming the anode pixels and cathode electrode.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask layer;
• forming a first gold layer on the rear and front major surfaces and on sidewalls of the semiconductor substrate by electroless plating;
• polishing the first gold layer such that the first gold layer remains located only on the front major surface of the semiconductor substrate to form the cathode electrode;
• forming a positive photoresist pattern over the solder mask pixel separation regions;
• forming a second gold layer by PVD over the positive photoresist pattern and on exposed portions of the rear major surface of the substrate;
• and
• lifting off the positive photoresist pattern to form the anode pixels.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask layer;
• forming a first gold layer on the rear and front major surfaces and on sidewalls of the semiconductor substrate by electroless plating;
• polishing the gold layer such that the gold layer remains located only on the front major surface of the semiconductor substrate to form the cathode electrode;
• forming a second gold layer on exposed portions of the rear major surface between the solder mask pixel separation regions and on the solder mask pixel separation regions by PVD;
• polishing the second gold layer such that a portion of the gold layer located between the solder mask pixel separation regions on the rear major surface of the substrate forms the anode pixels, and no gold remains on the sidewalls of the semiconductor substrate;
• and
• forming additional solder mask material on the sidewalls of the substrate after the steps of forming the anode pixels and cathode electrode.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask layer;
• forming first and second passivating layers on the front and rear major surfaces of the semiconductor substrate prior to forming the solder mask layer by etching and passivation or by NaOCl polishing;
• forming a gold cathode on the first passivating layer;
• forming a gold layer on exposed portions of the second passivating layer on the rear major surface between the solder mask pixel separation regions and on the solder mask pixel separation regions by PVD;
• polishing the gold layer such that a first portion of the gold layer located between the solder mask pixel separation regions on the second passivating layer over the rear major surface of the substrate forms the anode pixels, and no gold remains on the sidewalls of the semiconductor substrate;
• and
• forming additional solder mask material on the sidewalls of the substrate after the steps of forming the anode pixels and cathode electrode.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask layer;
• forming first and second passivating layers on the front and rear major surfaces of the semiconductor substrate by NaOCl polishing prior to forming the solder mask layer;
• forming a gold layer on the first passivating layer on the front major surface of the semiconductor substrate to form the cathode electrode prior to forming the solder mask layer;
• forming a gold layer over exposed portions of the second passivating layer on the rear major surface between the solder mask pixel separation regions by electroless plating to form the anode pixels;
• and
• forming additional solder mask material on the sidewalls of the substrate after the steps of forming the anode pixels and cathode electrode.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask laver;
• forming first and second passivating layers on the front and rear major surfaces of the semiconductor substrate by NaOCl polishing prior to forming the solder mask layer;
• forming a gold layer on the first passivating layer on the front major surface of the semiconductor substrate to form the cathode electrode prior to forming the solder mask layer;
• forming a positive photoresist pattern over the solder mask pixel separation regions;
• forming a gold layer by PVD over the positive photoresist pattern and on exposed portions of the second passivating layer on the rear major surface of the substrate;
• and
• lifting off the positive photoresist pattern to form the anode pixels on the exposed portions of the second passivating layer.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask layer;
• forming a gold layer on the rear and front major surfaces and on sidewalls of the semiconductor substrate by electroless plating;
• polishing the gold layer such that the gold layer remains located only on the front major surface of the semiconductor substrate to form the cathode electrode;
• forming a passivating layer on the rear major surface of the semiconductor substrate prior to forming the solder mask layer;
• forming a gold layer on exposed portions of the passivating layer on the rear major surface between the solder mask pixel separation regions, on the front major surface and on sidewalls of the semiconductor substrate by electroless plating;
• polishing the gold layer such that a first portion of the gold layer located between the solder mask pixel separation regions on the passivating layer on the rear major surface of the substrate forms the anode pixels and no gold remains on the sidewalls of the semiconductor substrate;
• and
• forming additional solder mask material on the sidewalls of the substrate after the steps of forming the anode pixels and cathode electrode.

A method of making a semiconductor radiation detector, comprising:

• providing a semiconductor substrate comprising front and rear major opposing surfaces;
• forming a solder mask layer over the rear major surface;
• patterning the solder mask layer into a plurality of pixel separation regions;
• after the step of patterning the solder mask layer, forming anode pixels over the rear major surface, wherein each anode pixel is formed between adjacent pixel separation regions;
• wherein a cathode electrode is located over the front major surface of the substrate;
• wherein the step of patterning the solder mask layer into a plurality of pixel separation regions comprises exposing the solder mask layer to radiation through a mask and removing unexposed regions of the solder mask layer;
• forming an indium layer on the rear and front major surfaces and on sidewalls of the semiconductor substrate by electroless plating;
• polishing the indium layer such that the indium layer remains located only on the front major surface of the semiconductor substrate to form the cathode electrode;
• forming a gold layer on exposed portions of the rear major surface between the solder mask pixel separation regions and on sidewalls of the semiconductor substrate by electroless plating;
• polishing the gold layer such that a first portion of the gold layer located between the solder mask pixel separation regions on the rear major surface of the substrate forms the anode pixels, and no gold remains on the sidewalls of the semiconductor substrate;
• and
• forming additional solder mask material on the sidewalls of the substrate after the steps of forming the anode pixels and cathode electrode.