Methods for improved adhesion of protective layers of imager microlens structures by forming an interfacial region

A method of fabricating a semiconductor structure, comprising forming an interfacial region between a microlens and a protective oxide layer,

• wherein the interfacial region has a lower concentration of oxygen than the protective oxide layer;
• the interfacial region is formed during a deposition process of the protective oxide layer;
• the deposition process of the protective oxide layer comprises a chemical vapor deposition (CVD) process;
• and
• the forming the interfacial region comprises creating a silicon-rich environment in a process chamber prior to applying power in the CVD process.

A method of fabricating a semiconductor structure, comprising forming an interfacial region between a microlens and a protective oxide layer,

• wherein the interfacial region has a lower concentration of oxygen than the protective oxide layer;
• the interfacial region is formed during a deposition process of the protective oxide layer;
• the deposition process of the protective oxide layer comprises a chemical vapor deposition (CVD) process;
• and
• the forming the interfacial region comprises flowing an inorganic precursor for a predetermined amount of time prior to applying power in the CVD process.

A method of fabricating a semiconductor structure, comprising forming an interfacial region between a microlens and a protective oxide layer,

• wherein the interfacial region has a lower concentration of oxygen than the protective oxide layer;
• further comprising forming the protective oxide layer using a plasma enhanced chemical vapor deposition (PECVD) process, wherein the forming the interfacial region occurs as part of the PECVD process;
• wherein the PECVD process comprises:
• placing a wafer comprising the microlens in a process chamber;
• flowing an oxidizer in the process chamber;
• and
• flowing an inorganic precursor in the process chamber for a predetermined amount of time prior to applying radio frequency (RF) power to initiate deposition.

A method of forming a semiconductor structure, comprising:

• forming an organic layer on a substrate;
• and
• forming an inorganic layer on the organic layer,
• wherein the forming the inorganic layer comprises forming an interfacial region between the organic layer and the inorganic layer;
• the interfacial region has a lower concentration of oxygen than the inorganic layer;
• the interfacial region increases adhesion between the organic layer and the inorganic layer compared to an adhesion level of the organic layer being in direct contact with the inorganic layer;
• and
• further comprising forming the inorganic layer using a deposition process, wherein the forming the interfacial region occurs as part of the deposition process,
• wherein the deposition process comprises:
• placing a wafer comprising the organic layer in a process chamber;
• flowing an oxidizer in the process chamber;
• and
• flowing an inorganic precursor in the process chamber for a predetermined amount of time prior to applying power to initiate deposition.