Method for making light emitting diode
AssigneesTsinghua University, Hon Hai Precision Industry Co., Ltd.
InventorsYang Wei, Shou-Shan Fan
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Abstract
A method for making light emitting diode, the method includes the following steps. First, a substrate having an epitaxial growth surface is provided. Second, a carbon nanotube layer is suspended above the epitaxial growth surface. Third, a first semiconductor layer, an active layer and a second semiconductor layer are grown on the epitaxial growth surface in that order. Fourth, a portion of the second semiconductor layer and the active layer is etched to expose a portion of the first semiconductor layer. Fifth, a first electrode is prepared on the first semiconductor layer and a second electrode is prepared on the second semiconductor layer.
Claims16
A method for making a light emitting diode, the method comprising:
- providing a substrate having an epitaxial growth surface;
- suspending a carbon nanotube layer above the epitaxial growth surface;
- growing a first semiconductor layer, an active layer and a second semiconductor layer on the epitaxial growth surface in that order, wherein the carbon nanotube layer is enclosed in the first semiconductor layer;
- exposing a portion of the first semiconductor layer by etching a portion of the second semiconductor layer and the active layer;
- preparing a first electrode electrically connected to the first semiconductor layer;
- and
- preparing a second electrode electrically connected to the second semiconductor layer.
Dependencies are inferred from the claim text.