Light emitting diode having improved light emission efficiency and method for fabricating the same

A method for fabricating a light emitting diode, comprising:

• a) providing a first conductive semiconductor layer onto a substrate;
• b) forming a porous region by dry or wet etching the top of the first conductive semiconductor layer;
• c) forming a metal layer on the first conductive semiconductor layer where the porous region is formed;
• d) regrowing the first conductive semiconductor layer on the metal layer;
• e) forming an active layer on the regrown first conductive semiconductor layer;
• and
• f) forming a second conductive semiconductor layer on the active layer,
• wherein at step d), the first conductive semiconductor layer is regrown while the metal layer is discontinuously patterned in the porous region by annealing and the regrown first conductive semiconductor layer has a thickness to generate surface plasma resonance between the patterned metal layer and the active layer.