US 8,476,084 B1Granted

Method and structure of sensors or electronic devices using vertical mounting

AssigneemCube Inc.

InventorsXiao “Charles” Yang, Hong Wan

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Abstract

A method and structure for fabricating sensor(s) or electronic device(s) using vertical mounting is presented. The method includes providing a substrate having a surface region and forming sensor(s) or electronic device(s) on a first region overlying the surface region. At least one bond pad structure can be formed from at least one trench structure. The resulting device can then be singulated within a vicinity of the bond pad structure(s) to form at least one integrated sensor or electronic devices having at least one vertical bond pad. At least one singulated device(s) can be coupled to a package, having a package surface region, such that the vertical bond pad(s) are configured horizontally, and at least one interconnection can be formed between the vertical bond pad(s) and at least one portion of the package surface region.

Claims22

Dependent claims

A method for fabricating an integrated device, the method comprising:

providing a substrate having a surface region;
forming at least one integrated device provided on a first region overlying the surface region, the at least one integrated device having at least one contact region, the first region having a first surface region, the at least one integrated device including one or more sensors and/or one or more electronic devices;
forming at least one trench structure within at least one portion of the first region;
forming a dielectric material overlying the first region and the at least one trench structure;
removing at least one portion of the dielectric material within a vicinity of the at least one contact region;
forming a conduction material overlying the dielectric material, the at least one trench structure, and the at least one contact region;
removing at least one portion of the conduction material within a vicinity of the at least one contact region and the at least one trench structure to form at least one bonding structure;
singulating the resulting device within a vicinity of the at least one bonding structure to form at least one singulated integrated device having at least one vertical bond pad;
coupling the at least one singulated integrated device to a package, the package having a package surface region, the at least one singulated device being coupled to the package surface region such that the at least one vertical bond pad is configured horizontally;
and
forming at least one interconnection between the at least one vertical bond pad and at least a portion of the package surface region.

8 more elements

A method for fabricating an integrated device, the method comprising:

providing a substrate having a surface region;
forming at least one integrated device provided on a first region overlying the surface region, the at least one integrated device having at least one contact region, the first region having a first surface region, the at least one integrated device including one or more sensors and/or one or more electronic devices;
forming at least one trench structure within at least one portion of the first region, the at least one trench structure being formed via a deep reactive-ion etching (DRIE) process, the trench sidewalls having slopes greater than 90 degrees;
forming a dielectric material overlying the first region and the at least one trench structure;
removing at least one portion of the dielectric material within a vicinity of the at least one contact region;
forming a conduction material overlying the dielectric material, the at least one trench structure, and the at least one contact region;
removing at least one portion of the conduction material within a vicinity of the at least one contact region and the at least one trench structure to form at least one bonding structure;
singulating the resulting device within a vicinity of the at least one bonding structure to form at least one singulated integrated device having at least one vertical bond pad;
coupling the at least one singulated integrated device to a package, the package having a package surface region, the at least one singulated device being rotated 90 degrees and being coupled to the package surface region such that the at least one vertical bond pad is configured horizontally;
forming at least one interconnection between the at least one vertical bond pad and at least a portion of the package surface region;
and
forming an encapsulation overlying the at least one singulated integrated device, the at least one interconnection, and the package.

9 more elements

Dependencies are inferred from the claim text.

Facts

Application: 13/113,883Filed 23 May 2011 · us provisional application
Priority: 24 May 2010
Granted: 2 Jul 2013
Term ends: Not estimatedThe source records don’t support an estimate.

Classification21 codes

H10W 90/00
Package configurations
B81B 7/007
Packages or encapsulation: interconnections between the MEMS and external electrical signals
B81B 7/0074
Packages or encapsulation: 3D packaging, i.e. encapsulation containing one or several MEMS devices arranged in planes non-parallel to the mounting…
H10W 72/019
Manufacture or treatment: of bond pads