Method for forming photoresist patterns
AssigneeUnited Microelectronics Corp.
InventorsYong-Fa Huang, Cheng-Han Wu, Yuan-Chi Pai, Chun-Chi Yu, Hung-Yi Wu
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Abstract
A method for forming photoresist patterns includes providing a substrate, forming a bi-layered photoresist on the substrate, and performing a photolithography process to pattern the bi-layered photoresist. The bi-layered photoresist includes a first photoresist layer and a second photoresist layer positioned between the first photoresist layer and the substrate. The first photoresist layer has a first refraction index and the second photoresist layer has a second refraction index, and the second refraction index is larger than the first refraction index.
Claims16
A method for forming photoresist patterns comprising:
- providing a substrate;
- forming a bi-layered photoresist on the substrate, the bi-layered photoresist comprising a first photoresist layer and a second photoresist layer positioned between the first photoresist layer and the substrate, the first photoresist layer having a first refractive index, the second photoresist layer having a second refractive index, and the second refractive index is larger than the first refractive index, wherein a thickness of the second photoresist layer is decided according to a formula (1):
- (4πnf/λf)d*cos θt=(2m+1)π (1)
- wherein nf is the second refractive index of the second photoresist layer, λf is a wavelength of an incident light, d is the thickness of the second photoresist layer, θt is an incident angle of the incident light, and m is a node of the incident light;
- and
- performing a photolithography to pattern the bi-layered photoresist.
Dependencies are inferred from the claim text.