Heat transfer film, semiconductor device, and electronic apparatus

A heat transfer film, comprising:

• a first heat transfer layer laminated on a substrate, said first heat transfer layer being formed of a first constituent material containing C (carbon) for transferring heat in an in-plane direction thereof and a layer thickness direction thereof;
• a first strain relaxation layer formed of a second constituent material and laminated on the first heat transfer layer;
• a second heat transfer layer formed of the first constituent material and laminated on the first strain relaxation layer;
• and
• a second strain relaxation layer formed of the second constituent material and laminated on the second heat transfer layer for relaxing a strain in the second heat transfer layer,
• wherein said second heat transfer layer has a layer thickness d and said second strain relaxation layer has a layer thickness t both within a range of equal to or greater than 1 nm and equal to or smaller than 20 nm, and
• said first constituent material includes a graphite and said second constituent material includes one of an amorphous Si, an amorphous Ge, an amorphous SiGe, an amorphous SiO2, an amorphous SiOx, and an amorphous TiO2.