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US 8,475,906 B2Granted
Silicon carbide based porous material and method for preparation thereof
AssigneeNGK Insulators, Ltd.
InventorsTakahiro Tomita, Kenji Morimoto
Life of this patent
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Abstract
A silicon carbide based porous material, which contains a metal silicide in an amount of 1 to 30% by mass and having a porosity of 38 to 80%, is provided.
Claims16
A silicon carbide containing porous material containing
- α-SiC and β-SiC, wherein the proportion of the β-SiC to the total of the α-SiC and the β-SiC is 5 to 100% by mass, and
- a metal silicide in an amount of 1 to 30% by mass and having a porosity of 38 to 80%, wherein the metal silicide is NiSi2 or ZrSi2.
A method for preparation of a silicon carbide containing porous material, which comprises forming a raw materials mixture containing a metal, silicon and carbon, into a predetermined shape, followed by resin removal and firing, to obtain a silicon carbide containing porous material containing
- α-SiC and β-SiC, wherein the proportion of the β-SiC to the total of the α-SiC and the β-SiC is 5 to 100% by mass, and
- a metal silicide in an amount of 1 to 30% by mass and a having a porosity of 38 to 80%, wherein the metal silicide is NiSi2 or ZrSi2.
Dependencies are inferred from the claim text.