Plasma processing device, plasma processing method and method of manufacturing element including substrate to be processed

A plasma processing method comprising:

• a step of arranging a substrate to be processed on a substrate holder provided within a vacuum vessel;
• a step of generating a plasma within the vacuum vessel;
• and
• a step of forming a separatrix expanding from an upper wall of the vacuum vessel opposite the substrate holder toward the substrate holder by a magnetic field line that is generated by a first magnetic field generation means including a magnetic coil provided outside the upper wall and that points, by the magnetic coil, from a center side of the upper wall toward a side wall side of the vacuum vessel or from the side wall side toward the upper wall side of the vacuum vessel and a magnetic field line that is generated by a second magnetic field generation means that is a permanent magnet provided outside the side wall of the vacuum vessel,
• wherein, in the step of generating the plasma, the plasma is generated between the magnetic coil provided outside the upper wall of the vacuum vessel and the second magnetic field generation means, and in the step of forming the separatrix, a shape of the separatrix is adjusted by adjusting a current applied to the magnetic coil, and, according to a strength of the applied current, an area where the magnetic field line of the second magnetic field generation means collides with the magnetic field line of the first magnetic field generation means is changed either to the side wall side or to the center side to control a range of the plasma,
• wherein the permanent magnet is provided along a circumferential direction of the side wall of the vacuum vessel such that the same magnetic pole points to an inside and an outside of the side wall of the vacuum vessel, and
• wherein the permanent magnet is one and only one ring-shaped permanent magnet in which an inside of the circumferential direction of the side wall of the vacuum vessel is all of one of the magnetic poles and an outside of the circumferential direction of the side wall of the vacuum vessel is all of the other of the magnetic poles.

A plasma processing device comprising:

• a vacuum vessel divided by a bulkhead plate having communication holes into a processing chamber for processing a substrate to be processed and a plasma generation chamber for generating a plasma with a plasma generation mechanism;
• a plasma generation mechanism for generating the plasma within the plasma generation chamber;
• a substrate holder that is arranged within the processing chamber and is for holding the substrate to be processed;
• and
• a magnetic circuit for generating a magnetic field within the vacuum vessel,
• wherein the magnetic circuit includes:
• a first magnetic field generation means that includes a magnetic coil provided outside an upper wall of the plasma generation chamber opposite the substrate holder so as to be parallel to and opposite the substrate holder and that is configured so as to generate, by the magnetic coil, a magnetic field line pointing from a center side of the upper wall toward a side wall side of the plasma generation chamber or a magnetic field line pointing from the side wall side toward the upper wall side of the plasma generation chamber;
• and
• a second magnetic field generation means that is provided outside the side wall of the plasma generation chamber along a circumferential direction of the side wall, that is arranged such that all of one of the magnetic poles points to an inside of the plasma generation chamber and all of the other of the magnetic poles points to the outside of the plasma generation chamber and that is one and only one ring-shaped permanent magnet, and
• according to a strength of a current applied to the magnetic coil, an area where a magnetic field line of the second magnetic field generation means collides with the magnetic field line of the first magnetic field generation means is changed either to the side wall side or to the center side to control a range of the plasma.

A plasma processing method comprising:

• a step of arranging a substrate to be processed on a substrate holder provided within a processing chamber of a vacuum vessel divided by a bulkhead plate having communication holes into the processing chamber for processing the substrate to be processed and a plasma generation chamber for generating the plasma with a plasma generation mechanism;
• a step of generating a plasma within the plasma generation chamber by the plasma generation mechanism;
• and
• a step of forming a separatrix expanding from an upper wall of the plasma generation chamber opposite the substrate holder toward the substrate holder by a magnetic field line that is generated from a first magnetic field generation means including a magnetic coil provided outside the upper wall of the plasma generation chamber so as to be parallel to and opposite the substrate holder and that points, by the magnetic coil, from a center side of the upper wall toward a side wall side of the plasma generation chamber or from the side wall side toward the upper wall side of the plasma generation chamber and a magnetic field line that is generated by a second magnetic field generation means that is a permanent magnet provided outside the side wall of the plasma generation chamber,
• wherein, in the step of forming the separatrix, a shape of the separatrix is adjusted by adjusting a current applied to the magnetic coil, and, according to a strength of the applied current, an area where the magnetic field line of the second magnetic field generation means collides with the magnetic field line of the first magnetic field generation means is changed either to the side wall side or to the center side to control a range of the plasma,
• the permanent magnet is provided along a circumferential direction of the side wall of the vacuum vessel such that the same magnetic pole points to an inside and an outside of the side wall of the vacuum vessel, and
• the permanent magnet is one and only one ring-shaped permanent magnet in which an inside of the circumferential direction of the side wall of the vacuum vessel is all of one of the magnetic poles and an outside of the circumferential direction of the side wall of the vacuum vessel is all of the other of the magnetic poles.