Back to results
US 8,475,238 B2Granted
Polishing pads including sidewalls and related polishing apparatuses
AssigneeSamsung Electronics Co., Ltd.
InventorsJae-Kwang Choi, Bo-Un Yoon, Myung-Ki Hong
Life of this patent
Estimating the term…
Abstract
A polishing pad may include a base and a plurality of polishing protrusions on a surface of the base. Each polishing protrusion may include a sidewall defining an opening in a surface of the polishing protrusion opposite the base. In addition, portions of the sidewall opposite the base may define a contact surface.
Claims18
A polishing pad comprising:
- a base;
- and
- a plurality of separate and spaced apart polishing protrusions on a surface of the base, wherein the polishing protrusions are spaced apart on the surface of the base, wherein each polishing protrusion includes a sidewall defining an opening in a surface of the polishing protrusion opposite the base, and wherein portions of the sidewall opposite the base define a contact surface;
- wherein each polishing protrusion includes a plurality of channels through the sidewall providing fluid communication between the opening and an outside of the polishing protrusion wherein depths of the channels are less than a depth of the opening.
1 more element
A polishing pad comprising:
- a base;
- and
- a plurality of separate and spaced apart polishing protrusions on a surface of the base, wherein the polishing protrusions are spaced apart on the surface of the base, wherein each polishing protrusion includes a sidewall defining an opening in a surface of the polishing protrusion opposite the base, and wherein portions of the sidewall opposite the base define a contact surface,
- wherein the sidewall of each polishing protrusion is castellated, and wherein a depth of each castellation is less than a depth of the opening in the surface of the polishing protrusion.
1 more element
A chemical mechanical polishing apparatus comprising:
- a polishing pad including a base and a plurality of separate and spaced apart polishing protrusions on a surface of the base, wherein the polishing protrusions are spaced apart on the surface of the base, wherein each polishing protrusion includes a sidewall defining an opening in a surface of the polishing protrusion opposite the base, and wherein portions of the sidewall opposite the base define a contact surface;
- a stage supporting the polishing pad;
- a polishing head configured to hold a wafer so that a surface of the wafer faces the polishing pad, to move the wafer so that the surface of the wafer contacts the polishing pad, and to rotate the wafer so that the surface of the wafer rotates in contact with the polishing pad;
- and
- a slurry supplier configured to feed a slurry between the polishing pad and the wafer;
- wherein each polishing protrusion includes a plurality of channels through the sidewall providing fluid communication of the slurry between the opening and an outside of the polishing protrusion while rotating the wafer in contact with the polishing pad wherein depths of the channels are less than a depth of the opening.
3 more elements
A chemical mechanical polishing apparatus comprising:
- a polishing pad including a base and a plurality of separate and spaced apart polishing protrusions on a surface of the base, wherein the polishing protrusions are spaced apart on the surface of the base, wherein each polishing protrusion includes a sidewall defining an opening in a surface of the polishing protrusion opposite the base, and wherein portions of the sidewall opposite the base define a contact surface;
- a stage supporting the polishing pad;
- a polishing head configured to hold a wafer so that a surface of the wafer faces the polishing pad, to move the wafer so that the surface of the wafer contacts the polishing pad, and to rotate the wafer so that the surface of the wafer rotates in contact with the polishing pad;
- and
- a slurry supplier configured to feed a slurry between the polishing pad and the wafer;
- wherein the sidewall of each polishing protrusion is castellated, and wherein a depth of each castellation is less than a depth of the opening in the surface of the polishing protrusion.
3 more elements
Dependencies are inferred from the claim text.